ND:Ce:Technical Indicatores YAG laser cristallina | |
Doping concentration | Nd:0.1~1.4at%,Ce:0.05~0.1at% |
Crystal sexualis | <111>+50 |
Transmissio wavefront pravitatis | s0.1A/inch |
Ratio exstinctio | ≥25dB |
Product amplitudo | Diameter≤50mm,Longitudo150 mmSlats et discus potest nativus sicut per mos requisita. |
Dimensiva tolerantia | Diameter:+0.00/-0.05mm,Longitudo:±0.5mm |
Superficies cylindrici processus | Molere teres, politio, filo |
Facies finis parallelismus | ≤ X" |
Perpendicularitas finis faciei ad axem virgae | ≤ 5' |
Finis facie idipsum | /10 @632.8nm |
Superficies qualitas | 10-5 (MIL-0-13830A) |
Chamfer | 0.15+0.05mm |
Coating | S1/S2:R@1064nms0.2% |
S1:R@1064nm≤0.2%,S2:R@1064=20+3% | |
S1:R@1064nm≤0.2%,S2:R@1064nmz99.8% | |
Aliae rationes cinematographicae nativus esse possunt. | |
Laser damnum limen cinematographici | ≥500MW/cm2 |
laser adsum | 1064nm |
Diode exantlaretur effusio necem | 808nm |
Refractivus index | 1.8197@1064nm |
speciale | Superficiem metallization |
Finis faciei angulus cuneus, superficies concava/convexa, etc. |